LPCVD silicon‐rich silicon nitride films for applications in micromechanics, studied with statistical experimental design*
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چکیده
منابع مشابه
LPCVD silicon-rich silicon nitride films for applications in micromechanics, studied with statistical experimental design*
A systematic investigation of the influence of the process parameters temperature, pressure, total gas flow, and SiH2Cl2 :NH3 gas flow ratio on the residual stress, the refractive index, and its nonuniformity across a wafer, the growth rate, the film thickness nonuniformity across a wafer, and the Si/N incorporation ratio of low pressure chemical vapor deposition SixNy films has been performed....
متن کاملAn electrostatic actuator for fatigue testing of low-stress LPCVD silicon nitride thin films
An electrostatic actuator and mechanical-amplifier (MA) device has been designed and fabricated to study fatigue properties of low-stress LPCVD silicon nitride thin films. The device consists of two resonators connected serially with a common torsion bar. When pumping electrostatic energy into the first resonator, the energy is transferred to the second resonator via the common torsion bar. The...
متن کاملNano-scale fatigue study of LPCVD silicon nitride thin films using a mechanical-amplifier actuator
This paper describes a nano-scale tensile test to study the fatigue properties of LPCVD silicon nitride thin films using a novel electrostatic actuator design. Mechanical-amplifier devices made in silicon nitride thin films can apply controllable tensile stress (2.0–7.8 GPa) to test structures with relatively low actuation voltages (5.7–35.4 VRMS) at the resonant frequencies of the devices. The...
متن کاملSilicon nitride films deposited with an electron beam created plasma
'G. C. Salter and R. E. Thomas, Solid State Electron. 20, 95 (1977). 2p. Van Halen, R. P. Mertens, R. J. Van Overstraeten, R. E. Thomas, and J. Van Meerbergen, IEEE Trans. Electron Devices ED.25, 507 (19781. -c. E. Norman and R. E. Thomas, IEEE Trans. Electron Devices ED-27, 731 (1980). 4R. E. Thomas, R. B. North, and C. E. Norman, IEEE Electron Device Lett. EDL-l, 79 (1980). Sp. DeVisschere, I...
متن کاملExperimental and chemical kinetic study of silicon nitride via LPCVD at low temperature from disilane and ammonia
Silicon nitride was deposited from disilane and ammonia reactant gases under LPCVD conditions and at temperatures around 600 OC. The growth rate was studied experimentally on 4 and 5-inch silicon wafers by batch depositions in a horizontal hotwall LPCVD furnace. The kinetics of growth was found to follow a LangmuirHinshelwood mechanism and the appropriate kinetic constants were estimated using ...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 1996
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.580239